Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7430DP-T1-GE3 SI7430DP-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 115051-SI7430DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Family Name: SI7430DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1735pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): RJK1576DPA-00#J5A; FDMS2572-F095; STL25N15F3; RJK1555DPA-00-J0;
Introduction Date: September 05, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

N-Channel 150V 26A (Tc) 5.2W (Ta), 64W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 150V 26A (Tc) 5.2W (Ta), 64W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 150V 26A (Tc) 5.2W (Ta), 64W (Tc) Surface Mount PowerPAK® SO-8

MOSFET N-CH 150V 26A PPAK SO-8