150V 7.2A N-CH MOSFET, 45mR RdsOn, PowerPAK SO Product overview: SI7430DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 7.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 7.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7430DP-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 150V 26A PPAK SO-8
N-Channel 150V 26A (Tc) 5.2W (Ta), 64W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 150V 26A (Tc) 5.2W (Ta), 64W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 150V 26A (Tc) 5.2W (Ta), 64W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 064566-SI7430DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Family Name: SI7430DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1735pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): BSC520N15NS3 G; RJK1555DPA-00#J0; RJK1555DPA-00-J0;
Introduction Date: September 05, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 150V 26A PPAK SO-8
N CHANNEL MOSFET, 150V, 26A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:26A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
N CHANNEL MOSFET, 150V, 26A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:26A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7430DP-T1-E3 | SI7430DP-T1-E3 | SI7430DP-T1-E3DKR-ND | 064566-SI7430DP-T1-E3 | SI7430DP-T1-E3 | SI7430DP-T1-E3 | 35M3623 |
| Product Name | 150V 7.2A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7430DP-T1-E3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 150V, 26A, Soic-8; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 64000 milliwatts | 5200 milliwatts | 5200 to 64000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
