MOSFET P-CH 30V 7.4A PPAK 1212-8
P-Channel 30V 7.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
MOSFET P-CH 30V 7.4A PPAK 1212-8
MOSFET P-CH 30V 7.4A PPAK 1212-8
Manufacturer: Vishay
Win Source Part Number: 064564-SI7423DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 56nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 11.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
P-CH MOSFET -30V, 7.4A, 18mR, 1.5W, SMT Product overview: SI7423DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, 7.4A, 1.5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 7.4A, 1.5W, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7423DN-T1-GE3
MOSFET P-CH 30V 7.4A PPAK 1212-8
MOSFET 30V 11.7A 3.8W 18mohm @ 10V
P CH MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:3.8W RoHS Compliant: Yes
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:3.8W RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SI7423DN-T1-GE3DKR-ND | SI7423DN-T1-GE3 | 064564-SI7423DN-T1-GE3 | 2088-SI7423DN-T1-GE3 | SI7423DN-T1-GE3 | SI7423DN-T1-GE3 | 33P5416 | 12R3259 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7423DN-T1-GE3 | -30V 7.4A 1.5W MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | P Ch Mosfet; Channel Type Vishay | P Channel Mosfet; Channel Type Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Package Type | PowerPAK® 1212-8 | PowerPAK® 1212-8 | SOT3; PowerPAK 1212-8 | PowerPAKR 1212-8 | TO-3 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts |