Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7423DN-T1-GE3

Description
MOSFET P-CH 30V 7.4A PPAK 1212-8
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Description
MOSFET P-CH 30V 7.4A PPAK 1212-8
Request a Quote Datasheet

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Product
Description
Supplier Links
Single FETs, MOSFETs - 742-SI7423DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SI7423DN-T1-GE3DKR-ND
Single FETs, MOSFETs 742-SI7423DN-T1-GE3DKR-ND
MOSFET P-CH 30V 7.4A PPAK 1212-8

MOSFET P-CH 30V 7.4A PPAK 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - 742-SI7423DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SI7423DN-T1-GE3TR-ND
Single FETs, MOSFETs 742-SI7423DN-T1-GE3TR-ND
P-Channel 30V 7.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

P-Channel 30V 7.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

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Single FETs, MOSFETs - 742-SI7423DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SI7423DN-T1-GE3CT-ND
Single FETs, MOSFETs 742-SI7423DN-T1-GE3CT-ND
MOSFET P-CH 30V 7.4A PPAK 1212-8

MOSFET P-CH 30V 7.4A PPAK 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7423DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7423DN-T1-GE3
Single FETs, MOSFETs SI7423DN-T1-GE3
MOSFET P-CH 30V 7.4A PPAK 1212-8

MOSFET P-CH 30V 7.4A PPAK 1212-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7423DN-T1-GE3 - 064564-SI7423DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7423DN-T1-GE3
064564-SI7423DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7423DN-T1-GE3 064564-SI7423DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 064564-SI7423DN-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.4A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 56nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 11.7A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 064564-SI7423DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 56nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 11.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
-30V 7.4A 1.5W MOSFET Transistor
2088-SI7423DN-T1-GE3
-30V 7.4A 1.5W MOSFET Transistor 2088-SI7423DN-T1-GE3
P-CH MOSFET -30V, 7.4A, 18mR, 1.5W, SMT Product overview: SI7423DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, 7.4A, 1.5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 7.4A, 1.5W, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7423DN-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET -30V, 7.4A, 18mR, 1.5W, SMT Product overview: SI7423DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, 7.4A, 1.5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 7.4A, 1.5W, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7423DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7423DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7423DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7423DN-T1-GE3
MOSFET P-CH 30V 7.4A PPAK 1212-8

MOSFET P-CH 30V 7.4A PPAK 1212-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V 11.7A 3.8W 18mohm @ 10V

MOSFET 30V 11.7A 3.8W 18mohm @ 10V

Buy Now Datasheet
P Ch Mosfet; Channel Type Vishay - 33P5416 - Newark, An Avnet Company
Chicago, IL, United States
P Ch Mosfet; Channel Type Vishay
33P5416
P Ch Mosfet; Channel Type Vishay 33P5416
P CH MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:3.8W RoHS Compliant: Yes

P CH MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:3.8W RoHS Compliant: Yes

Supplier's Site
P Channel Mosfet; Channel Type Vishay - 12R3259 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet; Channel Type Vishay
12R3259
P Channel Mosfet; Channel Type Vishay 12R3259
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:3.8W RoHS Compliant: Yes

P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:3.8W RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 742-SI7423DN-T1-GE3DKR-ND SI7423DN-T1-GE3 064564-SI7423DN-T1-GE3 2088-SI7423DN-T1-GE3 SI7423DN-T1-GE3 SI7423DN-T1-GE3 33P5416 12R3259
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7423DN-T1-GE3 -30V 7.4A 1.5W MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P Ch Mosfet; Channel Type Vishay P Channel Mosfet; Channel Type Vishay
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel
Package Type PowerPAK® 1212-8 PowerPAK® 1212-8 SOT3; PowerPAK 1212-8 PowerPAKR 1212-8 TO-3 TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
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