Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 983423-SI7401DN-T1
Power Dissipation: 1.5 W
Number of Pins: 8
Rise Time: 45 ns
Fall Time: 95 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Continuous Drain Current (ID): 7.3 A
Drain to Source Breakdown Voltage: 20 V
Turn-Off Delay Time: 130 ns
Drain to Source Resistance: 21 mΩ
Gate to Source Voltage (Vgs): 8 V
Transistor Product overview: SI7401DN-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI7401DN-T1 can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 983423-SI7401DN-T1 | 285-SI7401DN-T1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7401DN-T1 | MOSFET Transistor |
| V(BR)DSS | 20 volts | |
| rDS(on) | 0.0210 ohms | |
| PD | 1500 milliwatts | 1500 milliwatts |