Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7342DP-T1 SI7342DP-T1

Description
Manufacturer: Vishay Win Source Part Number: 064557-SI7342DP-T1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 19nC @ 4.5V Max Input Capacitance: 1900pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 8.25 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 064557-SI7342DP-T1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 19nC @ 4.5V Max Input Capacitance: 1900pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 8.25 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7342DP-T1 - 064557-SI7342DP-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7342DP-T1
064557-SI7342DP-T1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7342DP-T1 064557-SI7342DP-T1
Manufacturer: Vishay Win Source Part Number: 064557-SI7342DP-T1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 19nC @ 4.5V Max Input Capacitance: 1900pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 8.25 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 064557-SI7342DP-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 19nC @ 4.5V
Max Input Capacitance: 1900pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 8.25 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 064557-SI7342DP-T1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7342DP-T1
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 1800 milliwatts
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