MOSFET P-CH 60V 8A PPAK1212-8
P-CH MOSFET 60V 3.9A 115mR PwrPAK 1212 Product overview: SI7309DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7309DN-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET P-Ch 60V 3.9A PowerPAK 1212-8
MOSFET P-Ch 60V 3.9A PowerPAK 1212-8
MOSFET P-Ch 60V 3.9A PowerPAK 1212-8
P-Channel 60V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 60V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 60V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 028623-SI7309DN-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 600pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 115 mOhm @ 3.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
P CHANNEL MOSFET, -60V, 8A POWERPAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 60V, 0.115OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, POWERPAK-8. FREE 2 YEAR RADWELL WARRANTY
MOSFET P-CH 60V 8A PPAK1212-8
MOSFET -60V Vds 20V Vgs PowerPAK 1212-8
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7309DN-T1-E3 | 278-SI7309DN-T1-E3 | 7103386 | 7103386P | SI7309DN-T1-E3TR-ND | 028623-SI7309DN-T1-E3 | 73K3222 | 22265423 | SI7309DN-T1-E3 | SI7309DN-T1-E3 |
| Product Name | Single FETs, MOSFETs | 60V 3.9A MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7309DN-T1-E3 | P Channel Mosfet, -60V, 8A Powerpak, Full Reel; Channel Type Vishay | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||||
| IDSS | 8000 milliamps | 8000 milliamps | ||||||||
| PD | 3200 milliwatts | 3200 milliwatts | 3200 to 19800 milliwatts |
