Mosfet Array 2 N-Channel (Dual) 40V 6A 20.8W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 40V 6A 20.8W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 40V 6A 20.8W Surface Mount PowerPAK® 1212-8 Dual
Manufacturer: Vishay
Win Source Part Number: 1096147-SI7216DN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 20.8W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 670pF @ 20V
Maximum Rds On at Id,Vgs: 32 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
40V 6.5A N-CH MOSFET, 32mR Rds On, Dual Channel, SM Product overview: SI7216DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 40V, 6.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 40V, 6.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7216DN-T1-GE3 can be used for catalog matching and distributor lookup.
DUAL N CHANNEL MOSFET, 40V, 6A; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6.5A; On Resistance Rds(on):0.025ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET 2N-CH 40V 6A PPAK 1212
MOSFET 2N-CH 40V 6A PPAK 1212-8
MOSFET 40V Vds 20V Vgs PowerPAK 1212-8
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7216DN-T1-GE3DKR-ND | 1096147-SI7216DN-T1-GE3 | 278-SI7216DN-T1-GE3 | 26R1914 | SI7216DN-T1-GE3 | SI7216DN-T1-GE3 | SI7216DN-T1-GE3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7216DN-T1-GE3 | Dual 40V 6.5A MOSFET Transistor | Dual N Channel Mosfet, 40V, 6A; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays | MOSFET |
| Package Type | PowerPAK® 1212-8 Dual | SOT3; PowerPAK 1212-8 Dual | TO-3 | PowerPAK® 1212-8 Dual | |||
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||
| V(BR)DSS | 40 volts | 40 volts | |||||
| PD | 20800 milliwatts | 2500 milliwatts | |||||
| TJ | -50 to 150 C (-58 to 302 F) | -50 C (-58 F) | -50 to 150 C (-58 to 302 F) |
