P-CH MOSFET 30V 35A 11.4mR Surface Mount Product overview: SI7129DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7129DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 35A PPAK1212-8
Manufacturer: Vishay
Win Source Part Number: 028606-SI7129DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Family Name: Si7129DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 71nC @ 10V
Max Input Capacitance: 3345pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.4 mOhm @ 14.4A, 10V
Alternative Parts (Cross-Reference): BSZ120P03NS3G; STL9P3LLH6; BSZ120P03NS3EGXT;
Introduction Date: October 30, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
P-Channel 30V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 30V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 30V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET, P-CH, -30V, -35A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; RoHS Compliant: Yes
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
MOSFET P-CH 30V 35A PPAK1212-8
30V 35A 11.4mΩ@14.4A,10V 2.8V@250uA P Channel PowerPAK1212-8 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7129DN-T1-GE3 | SI7129DN-T1-GE3 | 028606-SI7129DN-T1-GE3 | SI7129DN-T1-GE3TR-ND | 61AC1937 | SI7129DN-T1-GE3 | SI7129DN-T1-GE3 | SI7129DN-T1-GE3 |
| Product Name | SMD 30V 35A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7129DN-T1-GE3 | Single FETs, MOSFETs | Mosfet, P-Ch, -30V, -35A, Powerpak 1212; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| PD | 52100 milliwatts | 3800 milliwatts | 3800 to 52100 milliwatts | 3800 milliwatts | ||||
| TJ | -50 C (-58 F) | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts |
