Manufacturer: Vishay
Win Source Part Number: 028606-SI7129DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Family Name: Si7129DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 71nC @ 10V
Max Input Capacitance: 3345pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.4 mOhm @ 14.4A, 10V
Alternative Parts (Cross-Reference): BSZ120P03NS3G; STL9P3LLH6; BSZ120P03NS3EGXT;
Introduction Date: October 30, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 30V 35A PPAK1212-8
P-Channel 30V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 30V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 30V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8
30V 35A 11.4mΩ@14.4A,10V 2.8V@250uA P Channel PowerPAK1212-8 MOSFETs ROHS
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
MOSFET P-CH 30V 35A PPAK1212-8
MOSFET, P-CH, -30V, -35A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028606-SI7129DN-T1-GE3 | SI7129DN-T1-GE3 | SI7129DN-T1-GE3TR-ND | SI7129DN-T1-GE3 | SI7129DN-T1-GE3 | SI7129DN-T1-GE3 | 61AC1937 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7129DN-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -30V, -35A, Powerpak 1212; Transistor Polarity Vishay |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 3800 to 52100 milliwatts | 3800 milliwatts | 3800 milliwatts | ||||
| TJ | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | ||||
| Package Type | SOT3; PowerPAK 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | Surface Mount | TO-3 |
