Vishay Intertechnology, Inc. N-Channel 11.7 A 1 V 0.0075 ohm MOSFET Transistor SI7114DN-T1-GE3

TRANSISTOR 11.7 A, 1 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8, FET General Purpose Power Product overview: SI7114DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 11.7 A, 1 V, 0.0075 ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 11.7 A, 1 V, 0.0075 ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7114DN-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 30V 11.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Manufacturer: Vishay
Win Source Part Number: 1096130-SI7114DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11.7A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 19nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 18.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance