POWER, FET, Product overview: SI7113ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7113ADN-T1-GE3
P-Channel 100V 10.8A (Tc) 27.8W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 100V 10.8A (Tc) 27.8W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 100V 10.8A (Tc) 27.8W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET P-CH 100V 10.8A PPAK
Manufacturer: Vishay
Win Source Part Number: 852379-SI7113ADN-T1-
Series: TrenchFET®
Features: 100 V
Package: Reel - TR
Family Name: SI7113
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI7113ADN-T1-GE3CT, SI7113ADN-T1-GE3DKR,
MOSFET P-CH 100V 10.8A PPAK
MOSFET, P-CH, -100V, -10.8A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-10.8A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.6V; RoHS Compliant: Yes
P-CHANNEL 100-V (D-S) MOSFET
100V 10.8A 132mΩ@3.8A,10V 27.8W 2.6V@250uA P Channel PowerPAK1212-8 MOSFETs ROHS
MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7113ADN-T1-GE3 | SI7113ADN-T1-GE3CT-ND | SI7113ADN-T1-GE3 | 852379-SI7113ADN-T1-GE3 | SI7113ADN-T1-GE3 | 78AC6540 | 26AK9927 | SI7113ADN-T1-GE3 | SI7113ADN-T1-GE3 |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7113ADN-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -100V, -10.8A, 150Deg C; Transistor Polarity Vishay | P-Channel 100-V (D-S) Mosfet Vishay | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||||
| Package Type | PowerPAK® 1212-8 | PowerPAK® 1212-8 | SOT3 | PowerPAKR 1212-8 | TO-3 | TO-3 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 100 volts | 100 volts |
