30V 11.3A N-CH MOSFET, 7.5mR Rds On, SMT Product overview: SI7112DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7112DN-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 30V 11.3A (Tc) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 30V 11.3A (Tc) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 30V 11.3A (Tc) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 137721-SI7112DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11.3A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 27nC @ 4.5V
Max Input Capacitance: 2610pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 17.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 11.3A PPAK1212-8
MOSFET, N CH, 30V, 11.3A, POWERPAK 1212-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.5W RoHS Compliant: Yes
MOSFET, N CHANNEL, 30V, 11.3A, POWERPAK 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.5W RoHS Compliant: Yes
MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
MOSFET N-CH 30V 11.3A PPAK1212-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI7112DN-T1-GE3 | SI7112DN-T1-GE3TR-ND | 137721-SI7112DN-T1-GE3 | SI7112DN-T1-GE3 | 33P5375 | 69W7220 | SI7112DN-T1-GE3 | SI7112DN-T1-GE3 |
| Product Name | 30V 11.3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7112DN-T1-GE3 | Single FETs, MOSFETs | Mosfet, N Ch, 30V, 11.3A, Powerpak 1212-8, Full Reel; Channel Type Vishay | Mosfet, N Channel, 30V, 11.3A, Powerpak 1212-8; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | |||
| TJ | -55 C (-67 F) | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | |||||
| Package Type | PowerPAK® 1212-8 | SOT3; PowerPAK 1212-8 | PowerPAK® 1212-8 | TO-3 | TO-3 | PowerPAKR 1212-8 |
