Vishay Precision Group 20V 5.2A TSSOP MOSFET Transistor SI6968BEDQ-T1-E3

Description
2 N-CH MOSFET 20V 5.2A 22mR TSSOP Product overview: SI6968BEDQ-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.2A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.2A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6968BEDQ-T1-E3 can be used for catalog matching and distributor lookup.
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Description
2 N-CH MOSFET 20V 5.2A 22mR TSSOP Product overview: SI6968BEDQ-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.2A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.2A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6968BEDQ-T1-E3 can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The SI6968BEDQ-T1-E3 is a dual N-channel MOSFET designed for common drain applications, featuring a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) rating of 6.5A at 25¬8C. It has a low on-state resistance (R_DS(on)) of 22 mOc at a gate-source voltage (V_GS) of 4.5V and 30 mOc at 2.5V, making it suitable for low-voltage applications. The device is ESD protected up to 3000V and operates within a temperature range of -55¬8C to 150¬8C. It is packaged in an 8-TSSOP form factor and is compliant with lead-free standards. The typical total gate charge (Q_g) is 12nC, which contributes to efficient switching performance. This MOSFET is a viable option for engineers seeking reliable performance in RF and other electronic applications.

Datasheet Summary
Powered by GS/AI

The SI6968BEDQ-T1-E3 is a dual N-channel MOSFET designed for common drain applications, featuring a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) rating of 6.5A at 25¬8C. It has a low on-state resistance (R_DS(on)) of 22 mOc at a gate-source voltage (V_GS) of 4.5V and 30 mOc at 2.5V, making it suitable for low-voltage applications. The device is ESD protected up to 3000V and operates within a temperature range of -55¬8C to 150¬8C. It is packaged in an 8-TSSOP form factor and is compliant with lead-free standards. The typical total gate charge (Q_g) is 12nC, which contributes to efficient switching performance. This MOSFET is a viable option for engineers seeking reliable performance in RF and other electronic applications.

Suppliers

Company
Product
Description
Supplier Links
Singapore
20V 5.2A TSSOP MOSFET Transistor
278-SI6968BEDQ-T1-E3
20V 5.2A TSSOP MOSFET Transistor 278-SI6968BEDQ-T1-E3
2 N-CH MOSFET 20V 5.2A 22mR TSSOP Product overview: SI6968BEDQ-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.2A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.2A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6968BEDQ-T1-E3 can be used for catalog matching and distributor lookup.

2 N-CH MOSFET 20V 5.2A 22mR TSSOP Product overview: SI6968BEDQ-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.2A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.2A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6968BEDQ-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6968BEDQ-T1-E3 - 064543-SI6968BEDQ-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6968BEDQ-T1-E3
064543-SI6968BEDQ-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6968BEDQ-T1-E3 064543-SI6968BEDQ-T1-E3
Manufacturer: Vishay Win Source Part Number: 064543-SI6968BEDQ-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Family Name: Si6968BEDQ Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5.2A Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 18nC @ 4.5V Maximum Rds On at Id,Vgs: 22 mOhm @ 6.5A, 4.5V Alternative Parts (Cross-Reference): AO8822; NTQD6968; NTQD6968R2; TSM6968DCA RV; Introduction Date: June 24, 2003 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 064543-SI6968BEDQ-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Family Name: Si6968BEDQ
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.2A
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Maximum Rds On at Id,Vgs: 22 mOhm @ 6.5A, 4.5V
Alternative Parts (Cross-Reference): AO8822; NTQD6968; NTQD6968R2; TSM6968DCA RV;
Introduction Date: June 24, 2003
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFETs - 2567381P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567381P
MOSFETs 2567381P
Dual N-Ch Mosfet

Dual N-Ch Mosfet

Supplier's Site
MOSFETs - 2567380 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567380
MOSFETs 2567380
Dual N-Ch Mosfet

Dual N-Ch Mosfet

Supplier's Site
MOSFETs - 2567381 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567381
MOSFETs 2567381
Dual N-Ch Mosfet

Dual N-Ch Mosfet

Supplier's Site
FET, MOSFET Arrays - SI6968BEDQ-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI6968BEDQ-T1-E3TR-ND
FET, MOSFET Arrays SI6968BEDQ-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.2A 1W Surface Mount 8-TSSOP

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.2A 1W Surface Mount 8-TSSOP

Buy Now Datasheet
FET, MOSFET Arrays - SI6968BEDQ-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI6968BEDQ-T1-E3CT-ND
FET, MOSFET Arrays SI6968BEDQ-T1-E3CT-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.2A 1W Surface Mount 8-TSSOP

Mosfet Array 2 N-Channel (Dual) Common Drain 20V 5.2A 1W Surface Mount 8-TSSOP

Buy Now Datasheet
Mosfet, Dual N Channel, 20V, 5.2A, Tssop-8; Transistor Polarity Vishay - 06J8126 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N Channel, 20V, 5.2A, Tssop-8; Transistor Polarity Vishay
06J8126
Mosfet, Dual N Channel, 20V, 5.2A, Tssop-8; Transistor Polarity Vishay 06J8126
MOSFET, DUAL N CHANNEL, 20V, 5.2A, TSSOP-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.2A; On Resistance Rds(on):0.0165ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

MOSFET, DUAL N CHANNEL, 20V, 5.2A, TSSOP-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.2A; On Resistance Rds(on):0.0165ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site
MOSFET 20V Vds 12V Vgs TSSOP-8

MOSFET 20V Vds 12V Vgs TSSOP-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI6968BEDQ-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI6968BEDQ-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI6968BEDQ-T1-E3
MOSFET 2N-CH 20V 5.2A 8TSSOP

MOSFET 2N-CH 20V 5.2A 8TSSOP

Supplier's Site
FET, MOSFET Arrays - SI6968BEDQ-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI6968BEDQ-T1-E3
FET, MOSFET Arrays SI6968BEDQ-T1-E3
MOSFET 2N-CH 20V 5.2A 8TSSOP

MOSFET 2N-CH 20V 5.2A 8TSSOP

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics RS Components, Ltd. DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-SI6968BEDQ-T1-E3 064543-SI6968BEDQ-T1-E3 2567381P SI6968BEDQ-T1-E3TR-ND 06J8126 SI6968BEDQ-T1-E3 SI6968BEDQ-T1-E3 SI6968BEDQ-T1-E3
Product Name 20V 5.2A TSSOP MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6968BEDQ-T1-E3 MOSFETs FET, MOSFET Arrays Mosfet, Dual N Channel, 20V, 5.2A, Tssop-8; Transistor Polarity Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays
Polarity N-Channel N-Channel N-Channel N-Channel; 2 N-Channel (Dual) Common Drain
PD 1000 milliwatts 1000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
V(BR)DSS 20 volts 20 volts
Package Type SOT3; 8-TSSOP TSSOP-8 "8-TSSOP (0.173"", 4.40mm Width)" TO-3 8-TSSOP (0.173", 4.40mm Width)
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