Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6966EDQ-T1 SI6966EDQ-T1

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 982128-SI6966EDQ-T1
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 20 V
Power Dissipation: 1.25 W
Weight: 19.986414 mg
Number of Channels: 2
Rise Time: 130 ns
Fall Time: 130 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TSSOP
Popularity: Low
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Element Configuration: Dual
Max Power Dissipation: 1.25 W
Turn-On Delay Time: 100 ns
Continuous Drain Current (ID): 5.2 A
Drain to Source Breakdown Voltage: 20 V
Turn-Off Delay Time: 420 ns
Drain to Source Resistance: 30 mΩ
Gate to Source Voltage (Vgs): 12 V

MOSFET 20V 4.5A 1W Product overview: SI6966EDQ-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.5A, 1W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.5A, 1W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI6966EDQ-T1 can be used for catalog matching and distributor lookup.