Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6966EDQ-T1 SI6966EDQ-T1

Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 982128-SI6966EDQ-T1 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 20 V Power Dissipation: 1.25 W Weight: 19.986414 mg Number of Channels: 2 Rise Time: 130 ns Fall Time: 130 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSSOP Popularity: Low Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Dual Max Power Dissipation: 1.25 W Turn-On Delay Time: 100 ns Continuous Drain Current (ID): 5.2 A Drain to Source Breakdown Voltage: 20 V Turn-Off Delay Time: 420 ns Drain to Source Resistance: 30 mΩ Gate to Source Voltage (Vgs): 12 V