Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6955ADQ-T1-E3 SI6955ADQ-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1096117-SI6955ADQ-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 8nC @ 5V Maximum Rds On at Id,Vgs: 80 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1096117-SI6955ADQ-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 8nC @ 5V Maximum Rds On at Id,Vgs: 80 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6955ADQ-T1-E3 - 1096117-SI6955ADQ-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6955ADQ-T1-E3
1096117-SI6955ADQ-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6955ADQ-T1-E3 1096117-SI6955ADQ-T1-E3
Manufacturer: Vishay Win Source Part Number: 1096117-SI6955ADQ-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 8nC @ 5V Maximum Rds On at Id,Vgs: 80 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096117-SI6955ADQ-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.5A
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 8nC @ 5V
Maximum Rds On at Id,Vgs: 80 mOhm @ 2.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
30V 2.5A TSSOP MOSFET Transistor
285-SI6955ADQ-T1-E3
30V 2.5A TSSOP MOSFET Transistor 285-SI6955ADQ-T1-E3
MOSFET 2P-CH 30V 2.5A 8-TSSOP Product overview: SI6955ADQ-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.5A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.5A, TSSOP, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI6955ADQ-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET 2P-CH 30V 2.5A 8-TSSOP Product overview: SI6955ADQ-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.5A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.5A, TSSOP, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI6955ADQ-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096117-SI6955ADQ-T1-E3 285-SI6955ADQ-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6955ADQ-T1-E3 30V 2.5A TSSOP MOSFET Transistor
Polarity P-Channel P-Channel
V(BR)DSS 30 volts
PD 830 milliwatts 830 milliwatts
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