Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6943BDQ-T1-E3 SI6943BDQ-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 106524-SI6943BDQ-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 800mW Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 2.3A Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 10nC @ 4.5V Maximum Rds On at Id,Vgs: 80 mOhm @ 2.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 106524-SI6943BDQ-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 800mW Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 2.3A Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 10nC @ 4.5V Maximum Rds On at Id,Vgs: 80 mOhm @ 2.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6943BDQ-T1-E3 - 106524-SI6943BDQ-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6943BDQ-T1-E3
106524-SI6943BDQ-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6943BDQ-T1-E3 106524-SI6943BDQ-T1-E3
Manufacturer: Vishay Win Source Part Number: 106524-SI6943BDQ-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 800mW Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 2.3A Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 10nC @ 4.5V Maximum Rds On at Id,Vgs: 80 mOhm @ 2.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 106524-SI6943BDQ-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 800mW
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 2.3A
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 10nC @ 4.5V
Maximum Rds On at Id,Vgs: 80 mOhm @ 2.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
12V 2.3A TSSOP MOSFET Transistor
278-SI6943BDQ-T1-E3
12V 2.3A TSSOP MOSFET Transistor 278-SI6943BDQ-T1-E3
P-CH MOSFET 12V 2.3A 80mR TSSOP Product overview: SI6943BDQ-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 2.3A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 2.3A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6943BDQ-T1-E3 can be used for catalog matching and distributor lookup.

P-CH MOSFET 12V 2.3A 80mR TSSOP Product overview: SI6943BDQ-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 2.3A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 2.3A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6943BDQ-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET 2P-CH 12V 2.3A 8TSSOP - 880-SI6943BDQ-T1-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 2P-CH 12V 2.3A 8TSSOP
880-SI6943BDQ-T1-E3
MOSFET 2P-CH 12V 2.3A 8TSSOP 880-SI6943BDQ-T1-E3
MOSFET 2P-CH 12V 2.3A 8TSSOP

MOSFET 2P-CH 12V 2.3A 8TSSOP

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI6943BDQ-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI6943BDQ-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI6943BDQ-T1-E3
MOSFET 2P-CH 12V 2.3A 8TSSOP

MOSFET 2P-CH 12V 2.3A 8TSSOP

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 106524-SI6943BDQ-T1-E3 278-SI6943BDQ-T1-E3 880-SI6943BDQ-T1-E3 SI6943BDQ-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6943BDQ-T1-E3 12V 2.3A TSSOP MOSFET Transistor MOSFET 2P-CH 12V 2.3A 8TSSOP Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel
V(BR)DSS 12 volts -12 volts
PD 800 milliwatts 800 milliwatts 800 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KCB821 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
DC - 20 GHz, 250 um Discrete GaAs pHEMT Die - QPD2025D - Qorvo
Specs
Transistor Type PHEMT
Transistor Technology / Material DC - 20 GHz, 250 um Discrete GaAs pHEMT Die
Package Type Die
View Details
2 suppliers
Single FETs, MOSFETs - 94-4007-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63
View Details
2 suppliers