Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6926AEDQ-T1-E3 SI6926AEDQ-T1-E3

Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1127870-SI6926AEDQ-T 1-E3 Drain to Source Voltage (Vdss): 20 V Power Dissipation: 830 mW Rise Time: 800 ns Fall Time: 800 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSSOP Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Dual Max Power Dissipation: 830 mW Max Operating Temperature: 150 °C Continuous Drain Current (ID): 4.1 A Drain to Source Breakdown Voltage: 20 V Turn-Off Delay Time: 500 ns Drain to Source Resistance: 30 mΩ Gate to Source Voltage (Vgs): 14 V