Vishay Intertechnology, Inc. MOSFET SI6475DQ-T1-GE3

P-Channel MOSFET designed for power switching applications, housed in a TSSOP-8 package with source pins 2, 3, 6, and 7 tied common. Rated for a drain-source voltage of -12 V and continuous drain current of -6.8 A at 70 °C. On-state resistance is 0.011 Ω at -4.5 V gate-source voltage, and 0.0135 Ω at -2.5 V. Maximum power dissipation is 0.69 W at 70 °C. Junction temperature range is -55 °C to 150 °C. Device is halogen-free and RoHS compliant.