Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6469DQ-T1 SI6469DQ-T1

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 980579-SI6469DQ-T1 Mounting: SMD (SMT) Power Dissipation: 1.5 W Rise Time: 30 ns Fall Time: 30 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSSOP Popularity: Low Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 6 A Drain to Source Breakdown Voltage: 8 V Turn-Off Delay Time: 85 ns Drain to Source Resistance: 28 mΩ Gate to Source Voltage (Vgs): 8 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 980579-SI6469DQ-T1 Mounting: SMD (SMT) Power Dissipation: 1.5 W Rise Time: 30 ns Fall Time: 30 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSSOP Popularity: Low Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 6 A Drain to Source Breakdown Voltage: 8 V Turn-Off Delay Time: 85 ns Drain to Source Resistance: 28 mΩ Gate to Source Voltage (Vgs): 8 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6469DQ-T1 - 980579-SI6469DQ-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6469DQ-T1
980579-SI6469DQ-T1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6469DQ-T1 980579-SI6469DQ-T1
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 980579-SI6469DQ-T1 Mounting: SMD (SMT) Power Dissipation: 1.5 W Rise Time: 30 ns Fall Time: 30 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSSOP Popularity: Low Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 6 A Drain to Source Breakdown Voltage: 8 V Turn-Off Delay Time: 85 ns Drain to Source Resistance: 28 mΩ Gate to Source Voltage (Vgs): 8 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 980579-SI6469DQ-T1
Mounting: SMD (SMT)
Power Dissipation: 1.5 W
Rise Time: 30 ns
Fall Time: 30 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TSSOP
Popularity: Low
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Continuous Drain Current (ID): 6 A
Drain to Source Breakdown Voltage: 8 V
Turn-Off Delay Time: 85 ns
Drain to Source Resistance: 28 mΩ
Gate to Source Voltage (Vgs): 8 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 980579-SI6469DQ-T1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6469DQ-T1
V(BR)DSS 8 volts
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