Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6463BDQ-T1-GE3 SI6463BDQ-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1096105-SI6463BDQ-T1 -GE3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.05W (Ta) Family Name: Si6463BDQ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.2A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 60nC @ 5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 15 mOhm @ 7.4A, 4.5V Alternative Parts (Cross-Reference): UPA1815GR-9JG-E2-A; UPA1815GR-9JG-E1; uPA1815GR-9JG; UPA1815GR-9JG-E1-A; Introduction Date: October 03, 2002 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1096105-SI6463BDQ-T1 -GE3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.05W (Ta) Family Name: Si6463BDQ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.2A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 60nC @ 5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 15 mOhm @ 7.4A, 4.5V Alternative Parts (Cross-Reference): UPA1815GR-9JG-E2-A; UPA1815GR-9JG-E1; uPA1815GR-9JG; UPA1815GR-9JG-E1-A; Introduction Date: October 03, 2002 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6463BDQ-T1-GE3 - 1096105-SI6463BDQ-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6463BDQ-T1-GE3
1096105-SI6463BDQ-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6463BDQ-T1-GE3 1096105-SI6463BDQ-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096105-SI6463BDQ-T1 -GE3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.05W (Ta) Family Name: Si6463BDQ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.2A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 60nC @ 5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 15 mOhm @ 7.4A, 4.5V Alternative Parts (Cross-Reference): UPA1815GR-9JG-E2-A; UPA1815GR-9JG-E1; uPA1815GR-9JG; UPA1815GR-9JG-E1-A; Introduction Date: October 03, 2002 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096105-SI6463BDQ-T1-GE3
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.05W (Ta)
Family Name: Si6463BDQ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Dimension: 8-TSSOP (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.2A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 60nC @ 5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 15 mOhm @ 7.4A, 4.5V
Alternative Parts (Cross-Reference): UPA1815GR-9JG-E2-A; UPA1815GR-9JG-E1; uPA1815GR-9JG; UPA1815GR-9JG-E1-A;
Introduction Date: October 03, 2002
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI6463BDQ-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI6463BDQ-T1-GE3
Single FETs, MOSFETs SI6463BDQ-T1-GE3
MOSFET P-CH 20V 6.2A 8-TSSOP

MOSFET P-CH 20V 6.2A 8-TSSOP

Supplier's Site Datasheet
Singapore
20V 6.2A TSSOP MOSFET Transistor
278-SI6463BDQ-T1-GE3
20V 6.2A TSSOP MOSFET Transistor 278-SI6463BDQ-T1-GE3
MOSFET P-CH 20V 6.2A 8-TSSOP Product overview: SI6463BDQ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.2A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.2A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6463BDQ-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 20V 6.2A 8-TSSOP Product overview: SI6463BDQ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.2A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.2A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6463BDQ-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI6463BDQ-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI6463BDQ-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI6463BDQ-T1-GE3
MOSFET P-CH 20V 6.2A 8-TSSOP

MOSFET P-CH 20V 6.2A 8-TSSOP

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1096105-SI6463BDQ-T1-GE3 SI6463BDQ-T1-GE3 278-SI6463BDQ-T1-GE3 SI6463BDQ-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6463BDQ-T1-GE3 Single FETs, MOSFETs 20V 6.2A TSSOP MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel
V(BR)DSS 20 volts 20 volts
PD 1050 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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