Manufacturer: Vishay
Win Source Part Number: 1096105-SI6463BDQ-T1
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.05W (Ta)
Family Name: Si6463BDQ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Dimension: 8-TSSOP (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.2A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 60nC @ 5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 15 mOhm @ 7.4A, 4.5V
Alternative Parts (Cross-Reference): UPA1815GR-9JG-E2-A; UPA1815GR-9JG-E1; uPA1815GR-9JG; UPA1815GR-9JG-E1-A;
Introduction Date: October 03, 2002
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
MOSFET P-CH 20V 6.2A 8-TSSOP
MOSFET P-CH 20V 6.2A 8-TSSOP Product overview: SI6463BDQ-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.2A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.2A, TSSOP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI6463BDQ-T1-GE3
MOSFET P-CH 20V 6.2A 8-TSSOP
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1096105-SI6463BDQ-T1-GE3 | SI6463BDQ-T1-GE3 | 278-SI6463BDQ-T1-GE3 | SI6463BDQ-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI6463BDQ-T1-GE3 | Single FETs, MOSFETs | 20V 6.2A TSSOP MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | ||
| V(BR)DSS | 20 volts | 20 volts | ||
| PD | 1050 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) |