Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 1206-8 ChipFET™
Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 1206-8 ChipFET™
Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 1206-8 ChipFET™
Manufacturer: Vishay
Win Source Part Number: 064539-SI5935CDC-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 11nC @ 5V
Max Input Capacitance: 455pF @ 10V
Maximum Rds On at Id,Vgs: 100 mOhm @ 3.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
2P-CH MOSFET 20V 3.1A 100mR P-CH SMD Product overview: SI5935CDC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5935CDC-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 20V 4A 1206-8
MOSFET -20V Vds 8V Vgs 1206-8 ChipFET
MOSFET 2P-CH 20V 4A 1206-8
MOSFET 2P-CH 20V 4A 1206-8
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SI5935CDC-T1-E3TR-ND | 064539-SI5935CDC-T1-E3 | 278-SI5935CDC-T1-E3 | 880-SI5935CDC-T1-E3 | SI5935CDC-T1-E3 | SI5935CDC-T1-E3 | SI5935CDC-T1-E3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5935CDC-T1-E3 | SMD 20V 3.1A MOSFET Transistor | MOSFET 2P-CH 20V 4A 1206-8 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays |
| Package Type | 8-SMD, Flat Leads | SOT3; 1206-8 ChipFET | 8-SMD, Flat Lead | ||||
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | ||||
| V(BR)DSS | 20 volts | -20 volts | 20 volts | ||||
| PD | 3100 milliwatts | 3100 milliwatts | 1300 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
