Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5913DC-T1-E3 SI5913DC-T1-E3

Manufacturer: Vishay Win Source Part Number: 064536-SI5913DC-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.7W (Ta), 3.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 1206-8 ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 330pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 84 mOhm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance