N-Channel 20V 4.4A (Ta) 1.1W (Ta) Surface Mount 1206-8 ChipFET™
Manufacturer: Vishay
Win Source Part Number: 108021-SI5856DC-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.4A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7.5nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 20V 4.4A 1206-8
MOSFET N-CH 20V 4.4A 1206-8
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI5856DC-T1-E3TR-ND | 108021-SI5856DC-T1-E3 | SI5856DC-T1-E3 | 880-SI5856DC-T1-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5856DC-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 20V 4.4A 1206-8 |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | 8-SMD, Flat Leads | SOT3; 1206-8 ChipFET | ||
| V(BR)DSS | 20 volts | 20 volts | ||
| PD | 1100 milliwatts | 1100 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
