Mosfet Array N and P-Channel 20V 4A (Tc) 3.1W Surface Mount 1206-8 ChipFET™
Mosfet Array N and P-Channel 20V 4A (Tc) 3.1W Surface Mount 1206-8 ChipFET™
Mosfet Array N and P-Channel 20V 4A (Tc) 3.1W Surface Mount 1206-8 ChipFET™
MOSFET N/P-CH 20V 4A 1206-8
N/P-Channel MOSFET, 20V, 4A, 36mΩ, SMD Product overview: SI5515CDC-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 20V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5515CDC-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 046874-SI5515CDC-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 11.3nC @ 5V
Max Input Capacitance: 632pF @ 10V
Maximum Rds On at Id,Vgs: 36 mOhm @ 6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
MOSFET N/P-CH 20V 4A 1206-8
DUAL N/P CHANNEL MOSFET, 20V, 1206; Transistor Polarity:Complementa
MOSFET -20V Vds 8V Vgs 1206-8 ChipFET
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI5515CDC-T1-E3TR-ND | SI5515CDC-T1-E3 | 278-SI5515CDC-T1-E3 | 046874-SI5515CDC-T1-E3 | SI5515CDC-T1-E3 | 16P3787 | SI5515CDC-T1-E3 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | P-Channel SMD 20V 4A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5515CDC-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N/p Channel Mosfet, 20V, 1206; Transistor Polarity Vishay | MOSFET |
| Package Type | 8-SMD, Flat Leads | 8-SMD, Flat Lead | SOT3; 1206-8 ChipFET | TO-3 | |||
| Polarity | P-Channel; N and P-Channel | N-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 4000 milliamps | 4000 milliamps |
