Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI5511DC-T1-E3 SI5511DC-T1-E3

Manufacturer: Vishay
Win Source Part Number: 106522-SI5511DC-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Maximum Power Dissipation: 3.1W, 2.6W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A, 3.6A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 7.1nC @ 5V
Max Input Capacitance: 435pF @ 15V
Maximum Rds On at Id,Vgs: 55 mOhm @ 4.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Mosfet Array N and P-Channel 30V 4A, 3.6A 3.1W, 2.6W Surface Mount 1206-8 ChipFET™

MOSFET N/P-CH 30V 4A/3.6A 1206-8 Product overview: SI5511DC-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4A, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4A, 3.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI5511DC-T1-E3 can be used for catalog matching and distributor lookup.