Vishay Intertechnology, Inc. Single FETs, MOSFETs SI5499DC-T1-E3

P-Channel 8V 6A (Tc) 2.5W (Ta), 6.2W (Tc) Surface Mount 1206-8 ChipFET™

MOSFET P-CH 8V 6A 1206-8 CHIPFET Product overview: SI5499DC-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5499DC-T1-E3 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1277543-SI5499DC-T1-E3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 8 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6.2W (Tc)
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 4 V
Vgs (Max): ±5V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SI5499DC-T1-E3TR,SI5499DC-T1-E3CT,SI5499DC-T1-E3DKR,SI5499DCT1E3
Base Product Number: SI5499
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V