Vishay Intertechnology, Inc. Single FETs, MOSFETs SI5475DDC-T1-GE3

P-Channel 12V 6A (Tc) 2.3W (Ta), 5.7W (Tc) Surface Mount 1206-8 ChipFET™

Manufacturer: Vishay
Win Source Part Number: 028576-SI5475DDC-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.3W (Ta), 5.7W (Tc)
Family Name: Si5475DDC
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 1206-8 ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 50nC @ 8V
Max Input Capacitance: 1600pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 32 mOhm @ 5.4A, 4.5V
Alternative Parts (Cross-Reference): UPA2211T1M-T1-AT; TPCF8101(TE85L, F); TPCF8101(TE85L,F,M);
Introduction Date: October 19, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

MOSFET P-CH 12V 6A 1206-8 Product overview: SI5475DDC-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI5475DDC-T1-GE3 can be used for catalog matching and distributor lookup.