Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4967DY-T1-E3 SI4967DY-T1-E3

Manufacturer: Vishay
Win Source Part Number: 042614-SI4967DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 12V
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 55nC @ 10V
Maximum Rds On at Id,Vgs: 23 mOhm @ 7.5A, 4.5V
Alternative Parts (Cross-Reference): IRF7329TRPBF; AO4821L; AO4821;
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management

MOSFET 2P-CH 12V 8SOIC Product overview: SI4967DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4967DY-T1-E3 can be used for catalog matching and distributor lookup.