Mosfet Array 2 N-Channel (Dual) 20V 2W Surface Mount 8-SOIC
MOSFET 2N-CH 20V 8SOIC Product overview: SI4966DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4966DY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 20V 8SOIC
DUAL N CHANNEL MOSFET, 20V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.1A; On Resistance Rds(on):0.025ohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:2W RoHS Compliant: Yes
MOSFET 2N-CH 20V 8SOIC
MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.019Ohm;ID +/-7.1A;SO-8;PD 2W;VGS +/-1
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4966DY-T1-E3TR-ND | 289-SI4966DY-T1-E3 | SI4966DY-T1-E3 | 06J8013 | SI4966DY-T1-E3 | 70026027 |
| Product Name | FET, MOSFET Arrays | 20V MOSFET Transistor | FET, MOSFET Arrays | Dual N Channel Mosfet, 20V, Soic, Full Reel; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.019Ohm;ID +/-7.1A;SO-8;PD 2W;VGS +/-1 |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Tape & Reel (TR) | 8-SOIC (0.154", 3.90mm Width) | TO-3 | SO-8 | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |