Vishay Precision Group FET, MOSFET Arrays SI4966DY-T1-E3

Description
Mosfet Array 2 N-Channel (Dual) 20V 2W Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 20V 2W Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI4966DY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4966DY-T1-E3TR-ND
FET, MOSFET Arrays SI4966DY-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 20V 2W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 20V 2W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI4966DY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI4966DY-T1-E3
FET, MOSFET Arrays SI4966DY-T1-E3
MOSFET 2N-CH 20V 8SOIC

MOSFET 2N-CH 20V 8SOIC

Supplier's Site Datasheet
20V MOSFET Transistor 289-SI4966DY-T1-E3
MOSFET 2N-CH 20V 8SOIC Product overview: SI4966DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4966DY-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 20V 8SOIC Product overview: SI4966DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4966DY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4966DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4966DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4966DY-T1-E3
MOSFET 2N-CH 20V 8SOIC

MOSFET 2N-CH 20V 8SOIC

Supplier's Site
Dual N Channel Mosfet, 20V, Soic, Full Reel; Transistor Polarity Vishay - 06J8013 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 20V, Soic, Full Reel; Transistor Polarity Vishay
06J8013
Dual N Channel Mosfet, 20V, Soic, Full Reel; Transistor Polarity Vishay 06J8013
DUAL N CHANNEL MOSFET, 20V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.1A; On Resistance Rds(on):0.025ohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:2W RoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 20V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.1A; On Resistance Rds(on):0.025ohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:2W RoHS Compliant: Yes

Supplier's Site
MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.019Ohm;ID +/-7.1A;SO-8;PD 2W;VGS +/-1 - 70026027 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.019Ohm;ID +/-7.1A;SO-8;PD 2W;VGS +/-1
70026027
MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.019Ohm;ID +/-7.1A;SO-8;PD 2W;VGS +/-1 70026027
MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.019Ohm;ID +/-7.1A;SO-8;PD 2W;VGS +/-1

MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.019Ohm;ID +/-7.1A;SO-8;PD 2W;VGS +/-1

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Allied Electronics, Inc.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4966DY-T1-E3TR-ND SI4966DY-T1-E3 289-SI4966DY-T1-E3 SI4966DY-T1-E3 06J8013 70026027
Product Name FET, MOSFET Arrays FET, MOSFET Arrays 20V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Dual N Channel Mosfet, 20V, Soic, Full Reel; Transistor Polarity Vishay MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.019Ohm;ID +/-7.1A;SO-8;PD 2W;VGS +/-1
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) TO-3 SO-8
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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