Vishay Intertechnology, Inc. FET, MOSFET Arrays SI4963BDY-T1-GE3

Description
Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surface Mount 8-SOIC
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Description
Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surface Mount 8-SOIC
Request a Quote Datasheet

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Description
Supplier Links
FET, MOSFET Arrays - SI4963BDY-T1-GE3-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4963BDY-T1-GE3-ND
FET, MOSFET Arrays SI4963BDY-T1-GE3-ND
Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4963BDY-T1-GE3 - 1096048-SI4963BDY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4963BDY-T1-GE3
1096048-SI4963BDY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4963BDY-T1-GE3 1096048-SI4963BDY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096048-SI4963BDY-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.9A Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 21nC @ 4.5V Maximum Rds On at Id,Vgs: 32 mOhm @ 6.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096048-SI4963BDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.9A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 21nC @ 4.5V
Maximum Rds On at Id,Vgs: 32 mOhm @ 6.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4963BDY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4963BDY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4963BDY-T1-GE3
MOSFET 2P-CH 20V 4.9A 8SOIC

MOSFET 2P-CH 20V 4.9A 8SOIC

Supplier's Site
MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V

MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4963BDY-T1-GE3-ND 1096048-SI4963BDY-T1-GE3 SI4963BDY-T1-GE3 SI4963BDY-T1-GE3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4963BDY-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO
Polarity P-Channel
V(BR)DSS 20 volts
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