The Dual P-Channel MOSFET, part number Si4948BEY, features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of 3.1A at 25¬8C. The on-resistance (R_DS(on)) is specified at 0.120Oc when the gate-source voltage (V_GS) is -10V and 0.150Oc at -4.5V. This device is designed for surface mounting in an SO-8 package and is compliant with RoHS and halogen-free standards. The maximum power dissipation is rated at 2.4W at 25¬8C, decreasing to 1.4W at 70¬8C. The operating temperature range is from -55¬8C to 175¬8C, making it suitable for a variety of applications. The MOSFET also exhibits low gate leakage and minimal zero gate voltage drain current, enhancing its reliability in circuit designs.
Mosfet Array 2 P-Channel (Dual) 60V 2.4A 1.4W Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 60V 2.4A 1.4W Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 60V 2.4A 1.4W Surface Mount 8-SOIC
P-Channel JFET, 60V, 2.4A ID, 120mR Rds(on), SOIC Product overview: SI4948BEY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60V, 2.4A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.4A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4948BEY-T1-GE3
MOSFET Dual P-Ch 60V 3.1/2.4A 175C SOIC8
MOSFET Dual P-Ch 60V 3.1/2.4A 175C SOIC8
MOSFET Dual P-Ch 60V 3.1/2.4A 175C SOIC8
Manufacturer: Vishay
Win Source Part Number: 1096046-SI4948BEY-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.4A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 22nC @ 10V
Maximum Rds On at Id,Vgs: 120 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
MOSFET 2P-CH 60V 2.4A 8-SOIC
DUAL P CH MOSFET, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.4A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET, PP CHANNEL, 60V, 3.1A, SO8; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.4A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET 2P-CH 60V 2.4A 8SOIC
60V 2.4A 120mΩ@3.1A,10V 1.4W 3V@250uA 2 P-Channel SOP-8 MOSFETs ROHS
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4948BEY-T1-GE3TR-ND | 278-SI4948BEY-T1-GE3 | 7879008 | 7879008P | 1096046-SI4948BEY-T1-GE3 | SI4948BEY-T1-GE3 | 15R5138 | 55R1930 | SI4948BEY-T1-GE3 | SI4948BEY-T1-GE3 | SI4948BEY-T1-GE3 |
| Product Name | FET, MOSFET Arrays | P-Channel 60V 2.4A SOIC MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4948BEY-T1-GE3 | FET, MOSFET Arrays | Dual P Ch Mosfet, Full Reel; Transistor Polarity Vishay | Mosfet, Pp Channel, 60V, 3.1A, So8; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Soic | SOIC | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | TO-3 | TO-3 | ||||
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | |||||
| PD | 1400 milliwatts | 1400 milliwatts | 1400 milliwatts | ||||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||||
| MOSFET Operating Mode | Enhancement |
