MOSFET N-CHAN DUAL 60V SO-8
Mosfet Array 2 N-Channel (Dual) 60V 5.2A (Ta), 6.1A (Tc) 2W (Ta), 2.8W (Tc) Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 60V 5.2A (Ta), 6.1A (Tc) 2W (Ta), 2.8W (Tc) Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 60V 5.2A (Ta), 6.1A (Tc) 2W (Ta), 2.8W (Tc) Surface Mount 8-SO
Small Signal Field-Effect Transistor, Product overview: SI4946CDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4946CDY-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 894616-SI4946CDY-T1-
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array 2 N-Channel (Dual) 60V 5.2A (Ta), 6.1A (Tc) 2W (Ta), 2.8W (Tc) Surface Mount 8-SO
Package: 8-SOIC (0.154", 3.90mm Width)
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI4946
Categories: Discrete Semiconductor Products
Case / Package: 8-SO
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 81 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI4946CDY-T1-GE3DKR,
MOSFET 2N-CH 60V 5.2A/6.1A 8SO
DUAL MOSFET, N-CH, 60V, 6.1A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6.1A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
DUAL N-CHANNEL 60-V (D-S) MOSFET
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4946CDY-T1-GE3 | SI4946CDY-T1-GE3TR-ND | 278-SI4946CDY-T1-GE3 | 894616-SI4946CDY-T1-GE3 | SI4946CDY-T1-GE3 | SI4946CDY-T1-GE3 | 50AC9666 | 26AK9925 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4946CDY-T1-GE3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual Mosfet, N-Ch, 60V, 6.1A, Soic; Transistor Polarity Vishay | Dual N-Channel 60-V (D-S) Mosfet Vishay |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | |||||||
| IDSS | 5200 milliamps | 6100 milliamps |
