Mosfet Array 2 N-Channel (Dual) 60V 6.5A 3.7W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 6.5A 3.7W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 6.5A 3.7W Surface Mount 8-SOIC
N-Channel MOSFET, 60V, 6.5A, 41mR Rds On, 2-Element, SOP-8 Product overview: SI4946BEY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 6.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 6.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4946BEY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028562-SI4946BEY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: SI4946BEY
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.7W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 6.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 840pF @ 30V
Maximum Rds On at Id,Vgs: 41 mOhm @ 5.3A, 10V
Alternative Parts (Cross-Reference): TSM4436CS RLG; TSM4436CS RL; Si4946CDY-T1-GE3; DMN6066SSD; STS4DNF60L; SI4946BEY-T1-GE3; SP8K33TB;
Introduction Date: December 02, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
MOSFET 2N-CH 60V 6.5A 8-SOIC
MOSFET, Dual, N-Channel, 60V, 6.5 A, 3.7 W, SO-8
MOSFET 2N-CH 60V 6.5A 8SOIC
DUAL N CHANNEL MOSFET, 60V, SOIC; TRANSISTOR POLARITY:DUAL N CHANNEL; CONTINUOUS DRAIN CURRENT ID:6.5A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.033OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:2.4V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
DUAL N CHANNEL MOSFET, 60V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6.5A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
Dual MOSFET, Dual N Channel, 6.5 A, 60 V, 0.033 ohm, 20 V, 2.4 V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 60V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6.5A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4946BEY-T1-E3TR-ND | 278-SI4946BEY-T1-E3 | 028562-SI4946BEY-T1-E3 | SI4946BEY-T1-E3 | 70026118 | SI4946BEY-T1-E3 | SI4946BEY-T1-E3 | 22271480 | 75M3216 | 61M9808 |
| Product Name | FET, MOSFET Arrays | N-Channel 60V 6.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4946BEY-T1-E3 | FET, MOSFET Arrays | MOSFET, Dual, N-Channel, 60V, 6.5 A, 3.7 W, SO-8 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor | Dual N Channel Mosfet, 60V, Soic; Transistor Polarity Vishay | Dual Mosfet, Dual N Channel, 6.5 A, 60 V, 0.033 Ohm, 20 V, 2.4 V Rohs Compliant Vishay |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | TO-3 | TO-3 | |||||
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||||
| PD | 3700 milliwatts | 3700 milliwatts | ||||||||
| TJ | -50 C (-58 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||||
| V(BR)DSS | 60 volts | 60 volts |
