Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4943CDY-T1-E3 SI4943CDY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1096042-SI4943CDY-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 62nC @ 10V Max Input Capacitance: 1945pF @ 10V Maximum Rds On at Id,Vgs: 19.2 mOhm @ 8.3A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 1096042-SI4943CDY-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 62nC @ 10V Max Input Capacitance: 1945pF @ 10V Maximum Rds On at Id,Vgs: 19.2 mOhm @ 8.3A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4943CDY-T1-E3 - 1096042-SI4943CDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4943CDY-T1-E3
1096042-SI4943CDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4943CDY-T1-E3 1096042-SI4943CDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 1096042-SI4943CDY-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 3.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 62nC @ 10V Max Input Capacitance: 1945pF @ 10V Maximum Rds On at Id,Vgs: 19.2 mOhm @ 8.3A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1096042-SI4943CDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 1945pF @ 10V
Maximum Rds On at Id,Vgs: 19.2 mOhm @ 8.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
FET, MOSFET Arrays - SI4943CDY-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4943CDY-T1-E3DKR-ND
FET, MOSFET Arrays SI4943CDY-T1-E3DKR-ND
Mosfet Array 2 P-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC

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FET, MOSFET Arrays - SI4943CDY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4943CDY-T1-E3TR-ND
FET, MOSFET Arrays SI4943CDY-T1-E3TR-ND
Mosfet Array 2 P-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI4943CDY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4943CDY-T1-E3CT-ND
FET, MOSFET Arrays SI4943CDY-T1-E3CT-ND
Mosfet Array 2 P-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SOIC

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4943CDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4943CDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4943CDY-T1-E3
MOSFET 2P-CH 20V 8A 8SOIC

MOSFET 2P-CH 20V 8A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -20V Vds 20V Vgs SO-8

MOSFET -20V Vds 20V Vgs SO-8

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096042-SI4943CDY-T1-E3 SI4943CDY-T1-E3DKR-ND SI4943CDY-T1-E3 SI4943CDY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4943CDY-T1-E3 FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel
V(BR)DSS 20 volts
PD 3100 milliwatts
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