Vishay Intertechnology, Inc. FET, MOSFET Arrays SI4936ADY-T1-GE3

Description
Mosfet Array 2 N-Channel (Dual) 30V 4.4A 1.1W Surface Mount 8-SOIC
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Description
Mosfet Array 2 N-Channel (Dual) 30V 4.4A 1.1W Surface Mount 8-SOIC
Request a Quote Datasheet

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FET, MOSFET Arrays - SI4936ADY-T1-GE3-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4936ADY-T1-GE3-ND
FET, MOSFET Arrays SI4936ADY-T1-GE3-ND
Mosfet Array 2 N-Channel (Dual) 30V 4.4A 1.1W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 4.4A 1.1W Surface Mount 8-SOIC

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936ADY-T1-GE3 - 794281-SI4936ADY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936ADY-T1-GE3
794281-SI4936ADY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936ADY-T1-GE3 794281-SI4936ADY-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 794281-SI4936ADY-T1- GE3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 4.4A Power - Max: 1.1W Family Name: Si4936ADY Categories: Discrete Semiconductor Products Manufacturer Package: 8-SO Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 3V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V Rds On (Maximum) @ Id, Vgs: 36 mOhm @ 5.9A, 10V Alternative Parts (Cross-Reference): FDS6984S-Q; FDS6984S-NL; FDS6984S; uPA2757GR; Introduction Date: April 20, 2000 ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Vishay Siliconix
Win Source Part Number: 794281-SI4936ADY-T1-GE3
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 4.4A
Power - Max: 1.1W
Family Name: Si4936ADY
Categories: Discrete Semiconductor Products
Manufacturer Package: 8-SO
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V
Rds On (Maximum) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
Alternative Parts (Cross-Reference): FDS6984S-Q; FDS6984S-NL; FDS6984S; uPA2757GR;
Introduction Date: April 20, 2000
ECCN: EAR99
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4936ADY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4936ADY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4936ADY-T1-GE3
MOSFET 2N-CH 30V 4.4A 8SOIC

MOSFET 2N-CH 30V 4.4A 8SOIC

Supplier's Site
MOSFET 30V 5.9A 2.0W 36mohm @ 10V

MOSFET 30V 5.9A 2.0W 36mohm @ 10V

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4936ADY-T1-GE3-ND 794281-SI4936ADY-T1-GE3 SI4936ADY-T1-GE3 SI4936ADY-T1-GE3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4936ADY-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3
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