Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4914BDY-T1-GE3 SI4914BDY-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 028552-SI4914BDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.7W, 3.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.4A, 8A
Gate-Source Threshold Voltage: 2.7V @ 250μA
Max Gate Charge: 10.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 21 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Mosfet Array 2 N-Channel (Half Bridge) 30V 8.4A, 8A 2.7W, 3.1W Surface Mount 8-SOIC

MOSFET 2N-CH 30V 8.4A/8A 8SOIC Product overview: SI4914BDY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8.4A, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.4A, 8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4914BDY-T1-GE3 can be used for catalog matching and distributor lookup.