Mosfet Array 2 N-Channel (Dual) 40V 6.6A 3.1W Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 136393-SI4906DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 6.6A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 625pF @ 20V
Maximum Rds On at Id,Vgs: 39 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 40V 6.6A 8-SOIC
MOSFET 2N-CH 40V 6.6A 8SOIC Product overview: SI4906DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 6.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 6.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4906DY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 40V 6.6A 8-SOIC
MOSFET 2N-CH 40V 6.6A 8SOIC
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4906DY-T1-E3TR-ND | 136393-SI4906DY-T1-E3 | SI4906DY-T1-E3 | 289-SI4906DY-T1-E3 | 880-SI4906DY-T1-E3 | SI4906DY-T1-E3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4906DY-T1-E3 | FET, MOSFET Arrays | 40V 6.6A MOSFET Transistor | MOSFET 2N-CH 40V 6.6A 8-SOIC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | ||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | |||
| PD | 3100 milliwatts | 2000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
