N-CH MOSFET 30V 8.8A 12mR SOIC Surface Mount Product overview: SI4892DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 8.8A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 8.8A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4892DY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028549-SI4892DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: Si4892DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.8A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA (Min)
Max Gate Charge: 10.5nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 12.4A, 10V
Alternative Parts (Cross-Reference): ISL9N312ASK8T; RK4410; NDS8410A-Q; RXH100N03TB;
Introduction Date: February 05, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 8.8A 8SO
MOSFET N-CH 30V 8.8A 8-SOIC
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.01Ohm;ID 8.8A;SO-8;PD 1.6W;VGS +/-20V;-55d
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4892DY-T1-E3 | 028549-SI4892DY-T1-E3 | SI4892DY-T1-E3 | 880-SI4892DY-T1-E3 | 70026116 |
| Product Name | SMD 30V 8.8A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4892DY-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 30V 8.8A 8-SOIC | MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.01Ohm;ID 8.8A;SO-8;PD 1.6W;VGS +/-20V;-55d |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | |
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||
| Package Type | SOT3; 8-SO | SO-8 |
