Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4892DY-T1-E3 SI4892DY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028549-SI4892DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: Si4892DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.8A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA (Min) Max Gate Charge: 10.5nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 mOhm @ 12.4A, 10V Alternative Parts (Cross-Reference): ISL9N312ASK8T; RK4410; NDS8410A-Q; RXH100N03TB; Introduction Date: February 05, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 028549-SI4892DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: Si4892DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.8A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA (Min) Max Gate Charge: 10.5nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 mOhm @ 12.4A, 10V Alternative Parts (Cross-Reference): ISL9N312ASK8T; RK4410; NDS8410A-Q; RXH100N03TB; Introduction Date: February 05, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4892DY-T1-E3 - 028549-SI4892DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4892DY-T1-E3
028549-SI4892DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4892DY-T1-E3 028549-SI4892DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 028549-SI4892DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: Si4892DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.8A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA (Min) Max Gate Charge: 10.5nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 mOhm @ 12.4A, 10V Alternative Parts (Cross-Reference): ISL9N312ASK8T; RK4410; NDS8410A-Q; RXH100N03TB; Introduction Date: February 05, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028549-SI4892DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: Si4892DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.8A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA (Min)
Max Gate Charge: 10.5nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 12.4A, 10V
Alternative Parts (Cross-Reference): ISL9N312ASK8T; RK4410; NDS8410A-Q; RXH100N03TB;
Introduction Date: February 05, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4892DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4892DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4892DY-T1-E3
MOSFET N-CH 30V 8.8A 8SO

MOSFET N-CH 30V 8.8A 8SO

Supplier's Site
MOSFET N-CH 30V 8.8A 8-SOIC - 880-SI4892DY-T1-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 8.8A 8-SOIC
880-SI4892DY-T1-E3
MOSFET N-CH 30V 8.8A 8-SOIC 880-SI4892DY-T1-E3
MOSFET N-CH 30V 8.8A 8-SOIC

MOSFET N-CH 30V 8.8A 8-SOIC

Supplier's Site
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.01Ohm;ID 8.8A;SO-8;PD 1.6W;VGS +/-20V;-55d - 70026116 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.01Ohm;ID 8.8A;SO-8;PD 1.6W;VGS +/-20V;-55d
70026116
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.01Ohm;ID 8.8A;SO-8;PD 1.6W;VGS +/-20V;-55d 70026116
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.01Ohm;ID 8.8A;SO-8;PD 1.6W;VGS +/-20V;-55d

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.01Ohm;ID 8.8A;SO-8;PD 1.6W;VGS +/-20V;-55d

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028549-SI4892DY-T1-E3 SI4892DY-T1-E3 880-SI4892DY-T1-E3 70026116
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4892DY-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 30V 8.8A 8-SOIC MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.01Ohm;ID 8.8A;SO-8;PD 1.6W;VGS +/-20V;-55d
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts 30 volts
PD 1600 milliwatts 1600 milliwatts 1600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO SO-8
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