The Si4884DY is an N-channel MOSFET designed for power switching applications, housed in an SO-8 package. It has a drain-source voltage rating of 30 V, a continuous drain current of 12 A at 25°C, and a maximum power dissipation of 1.9 W at 70°C. The on-state drain-source resistance is 0.0105 Ω at VGS = 10 V and 0.0165 Ω at VGS = 4.5 V. The device operates over a junction temperature range of -55°C to 150°C and meets the AEC-Q200 automotive qualification standard. Thermal resistance from junction to ambient is 68°C/W under steady-state conditions with the device surface-mounted on an FR4 board.
N-CH MOSFET 30V 12A 2.95W SO Product overview: SI4884DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A, 2.95W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, 2.95W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4884DY-T1-E3 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4884DY-T1-E3 |
| Product Name | 30V 12A 2.95W MOSFET Transistor |
| Polarity | N-Channel |
