Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R Product overview: SI4850EY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4850EY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028540-SI4850EY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.7W (Ta)
Family Name: Si4850EY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 22 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): UPA1727G-E2-A; UPA1727G-E1; uPA1727G;
Introduction Date: February 25, 2001
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SOIC
N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SOIC
N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 60V 6A 8SO
TRANSISTOR, N CHANNEL, MOSFET TECHNOLOGY, 60 VOLT DRAIN SOURCE MAX VOLTAGE, 8.5 AMP MAX CONTINUOUS DRAIN CURRENT, SOIC-8 PACKAGE, ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.
MOSFET N-CH 60V 6A 8SO
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.018Ohm;ID 6A;SO-8;PD 1.7W;VGS +/-20V;gFS 2
N CHANNEL MOSFET, 60V, 8.5A, SOIC-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:3.3W RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 8.5A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Karl Kruse GmbH & Co. KG | ODG (Origin Data Global) | Allied Electronics, Inc. | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4850EY-T1-E3 | 028540-SI4850EY-T1-E3 | SI4850EY-T1-E3DKR-ND | SI4850EY-T1-E3 | 22271268 | SI4850EY-T1-E3 | SI4850EY-T1-E3 | 70026070 | 35K3477 | 06J7915 | 880-SI4850EY-T1-E3 | SI4850EY-T1-E3 |
| Product Name | 60V 6A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4850EY-T1-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R | Single FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.018Ohm;ID 6A;SO-8;PD 1.7W;VGS +/-20V;gFS 2 | N Channel Mosfet, 60V, 8.5A, Soic-8, Full Reel; Channel Type Vishay | N Channel Mosfet, 60V, 8.5A, Soic-8; Channel Type Vishay | Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | 60 volts | |||||||
| Transconductance | 0.0250 kS | 0.0250 kS | ||||||||||
| PD | 3.3 milliwatts | 1700 milliwatts | 1700 milliwatts | 1700 milliwatts | 3300 milliwatts | 1700 milliwatts |
