MOSFET N-CH 40V 10A 8SO Product overview: SI4840DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4840DY-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 894600-SI4840DY-T1-G
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 40 V 10A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
Package: Reel - TR
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: Surface Mount
Part Status: Obsolete
Family Name: SI4840
Categories: Discrete Semiconductor Products
Case / Package: 8-SOIC
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 40V 10A 8SO
MOSFET N-CH 40V 10A 8SO
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4840DY-T1-GE3 | 894600-SI4840DY-T1-GE3 | SI4840DY-T1-GE3 | SI4840DY-T1-GE3 |
| Product Name | 40V 10A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4840DY-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| PD | 1560 milliwatts | 1560 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | Tape & Reel (TR) | SOT3; 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) |
