Vishay Intertechnology, Inc. 20V 4.1A MOSFET Transistor SI4823DY-T1-E3

MOSFET P-CH 20V 4.1A 8SO Product overview: SI4823DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4823DY-T1-E3 can be used for catalog matching and distributor lookup.

P-Channel 20V 4.1A (Tc) 1.7W (Ta), 2.8W (Tc) Surface Mount 8-SOIC

Manufacturer: Vishay
Win Source Part Number: 211654-SI4823DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.7W (Ta), 2.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.1A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 660pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 108 mOhm @ 3.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient