P-Channel 20V 4.1A (Tc) 1.7W (Ta), 2.8W (Tc) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 211654-SI4823DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.7W (Ta), 2.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.1A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 660pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 108 mOhm @ 3.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 20V 4.1A 8SO
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4823DY-T1-E3-ND | 211654-SI4823DY-T1-E3 | SI4823DY-T1-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4823DY-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 660 pF @ 10 V |
| V(BR)DSS | 20 volts |
