2 N-CH MOSFET 30V 8.2A 18.5mR SO Surface Mount Product overview: SI4816BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 8.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 8.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4816BDY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028528-SI4816BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Family Name: Si4816BDY
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1W, 1.25W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.8A, 8.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10nC @ 5V
Maximum Rds On at Id,Vgs: 18.5 mOhm @ 6.8A, 10V
Alternative Parts (Cross-Reference): AO4940; IRF7904PBF; AO4916;
Introduction Date: October 28, 2004
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Half Bridge) 30V 5.8A, 8.2A 1W, 1.25W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Half Bridge) 30V 5.8A, 8.2A 1W, 1.25W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Half Bridge) 30V 5.8A, 8.2A 1W, 1.25W Surface Mount 8-SOIC
MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
DUAL N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel + Schottky; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; On Resistance Rds(on):0.0155ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V RoHS Compliant: Yes
MOSFET, DUAL N CHANNEL, 30V, 0.0093OHM, 8.2A, SOIC-8, FULL REEL; Transistor Polarity:N Channel + Schottky; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.2A; On Resistance Rds(on):0.0093ohm; Rds(on) Test Voltage:10V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4816BDY-T1-E3 | 028528-SI4816BDY-T1-E3 | SI4816BDY-T1-E3TR-ND | SI4816BDY-T1-E3 | 51K6965 | 73W9413 | SI4816BDY-T1-E3 |
| Product Name | SMD 30V 8.2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4816BDY-T1-E3 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N Channel Mosfet, 30V, Soic; Transistor Polarity Vishay | Mosfet, Dual N Channel, 30V, 0.0093Ohm, 8.2A, Soic-8, Full Reel; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | |||
| PD | 1250 milliwatts | 1000 to 1250 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 30 volts |
