Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4654DY-T1-E3

Description
N-Channel 25V 28.6A (Tc) 2.5W (Ta), 5.9W (Tc) Surface Mount 8-SOIC
  • Single FETs, MOSFETs - SI4654DY-T1-E3-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4654DY-T1-E3 - 211643-SI4654DY-T1-E3 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4654DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
N-Channel 25V 28.6A (Tc) 2.5W (Ta), 5.9W (Tc) Surface Mount 8-SOIC
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - SI4654DY-T1-E3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4654DY-T1-E3-ND
Single FETs, MOSFETs SI4654DY-T1-E3-ND
N-Channel 25V 28.6A (Tc) 2.5W (Ta), 5.9W (Tc) Surface Mount 8-SOIC

N-Channel 25V 28.6A (Tc) 2.5W (Ta), 5.9W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4654DY-T1-E3 - 211643-SI4654DY-T1-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4654DY-T1-E3
211643-SI4654DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4654DY-T1-E3 211643-SI4654DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 211643-SI4654DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 28.6A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 3770pF @ 15V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 4 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 211643-SI4654DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 28.6A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 3770pF @ 15V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 4 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4654DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4654DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4654DY-T1-E3
MOSFET N-CH 25V 28.6A 8SO

MOSFET N-CH 25V 28.6A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4654DY-T1-E3-ND 211643-SI4654DY-T1-E3 SI4654DY-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4654DY-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 3770 pF @ 15 V
V(BR)DSS 25 volts
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