Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4636DY-T1-GE3

Description
N-Channel 30V 17A (Tc) 2.5W (Ta), 4.4W (Tc) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
N-Channel 30V 17A (Tc) 2.5W (Ta), 4.4W (Tc) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4636DY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4636DY-T1-GE3TR-ND
Single FETs, MOSFETs SI4636DY-T1-GE3TR-ND
N-Channel 30V 17A (Tc) 2.5W (Ta), 4.4W (Tc) Surface Mount 8-SOIC

N-Channel 30V 17A (Tc) 2.5W (Ta), 4.4W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4636DY-T1-GE3 - 104770-SI4636DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4636DY-T1-GE3
104770-SI4636DY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4636DY-T1-GE3 104770-SI4636DY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 104770-SI4636DY-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 4.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2635pF @ 15V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 104770-SI4636DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 4.4W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2635pF @ 15V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 17A MOSFET Transistor
278-SI4636DY-T1-GE3
30V 17A MOSFET Transistor 278-SI4636DY-T1-GE3
MOSFET N-CH 30V 17A 8SO Product overview: SI4636DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4636DY-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 17A 8SO Product overview: SI4636DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4636DY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4636DY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4636DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4636DY-T1-GE3
MOSFET N-CH 30V 17A 8SO

MOSFET N-CH 30V 17A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4636DY-T1-GE3TR-ND 104770-SI4636DY-T1-GE3 278-SI4636DY-T1-GE3 SI4636DY-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4636DY-T1-GE3 30V 17A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO Tape & Reel (TR) 2635 pF @ 15 V
V(BR)DSS 30 volts
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