Manufacturer: Vishay
Win Source Part Number: 064497-SI4618DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.98W, 4.16W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A, 15.2A
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 1535pF @ 15V
Maximum Rds On at Id,Vgs: 17 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 30V 8A 8-SOIC
Mosfet Array 2 N-Channel (Half Bridge) 30V 8A, 15.2A 1.98W, 4.16W Surface Mount 8-SOIC
MOSFET 2N-CH 30V 8A/15.2A 8SOIC
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 064497-SI4618DY-T1-E3 | SI4618DY-T1-E3 | SI4618DY-T1-E3TR-ND | SI4618DY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4618DY-T1-E3 | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Half Bridge) | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| PD | 1980 to 4160 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
