Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4559EY-T1-GE3 SI4559EY-T1-GE3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092866-SI4559EY-T1- GE3 Drain to Source Voltage (Vdss): 60 V Resistance: 460 µΩ Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Max Power Dissipation: 2.4 W Continuous Drain Current (ID): 4.5 A Drain to Source Resistance: 55 mΩ Gate to Source Voltage (Vgs): 20 V
Request a Quote
Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092866-SI4559EY-T1- GE3 Drain to Source Voltage (Vdss): 60 V Resistance: 460 µΩ Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Max Power Dissipation: 2.4 W Continuous Drain Current (ID): 4.5 A Drain to Source Resistance: 55 mΩ Gate to Source Voltage (Vgs): 20 V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4559EY-T1-GE3 - 1092866-SI4559EY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4559EY-T1-GE3
1092866-SI4559EY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4559EY-T1-GE3 1092866-SI4559EY-T1-GE3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092866-SI4559EY-T1- GE3 Drain to Source Voltage (Vdss): 60 V Resistance: 460 µΩ Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Max Power Dissipation: 2.4 W Continuous Drain Current (ID): 4.5 A Drain to Source Resistance: 55 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1092866-SI4559EY-T1-GE3
Drain to Source Voltage (Vdss): 60 V
Resistance: 460 µΩ
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Max Power Dissipation: 2.4 W
Continuous Drain Current (ID): 4.5 A
Drain to Source Resistance: 55 mΩ
Gate to Source Voltage (Vgs): 20 V

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1092866-SI4559EY-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4559EY-T1-GE3
Unlock Full Specs
to access all available technical data

Similar Products

QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD910025SAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
4 suppliers
RF FETs, MOSFETs - 2312-QPD1011ASRDKR-ND - DigiKey
Specs
Package Type 8-VDFN Exposed Pad
View Details
Transistor - 4733929 - Radwell International
Allen-Bradley / Rockwell Automation
View Details
MOSFETs - 1219548 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type SOT23; Sot-23
View Details