Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4539DY-T1-E3 SI4539DY-T1-E3

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 965592-SI4539DY-T1-E3
Length: 5 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 30 V
Power Dissipation: 2 W
Height: 1.55 mm
Weight: 506.605978 mg
Number of Channels: 2
Width: 4 mm
Rise Time: 13 ns
Fall Time: 15 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SO
Popularity: Low
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
Max Power Dissipation: 2 W
Turn-On Delay Time: 9 ns
Continuous Drain Current (ID): 5.8 A
Turn-Off Delay Time: 25 ns
Drain to Source Resistance: 53 mΩ
Gate to Source Voltage (Vgs): 20 V

MOSFET 30 Volt 5.9/4.9A 2W Product overview: SI4539DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.9A, 2W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.9A, 2W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI4539DY-T1-E3 can be used for catalog matching and distributor lookup.