Manufacturer: Vishay
Win Source Part Number: 135805-SI4500BDY-T1-
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.6A, 3.8A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 17nC @ 4.5V
Maximum Rds On at Id,Vgs: 20 mOhm @ 9.1A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
MOSFET N/P-CH 20V 6.6A 8SOIC
MOSFET N/P-CH 20V 6.6A 8SOIC
| Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 135805-SI4500BDY-T1-E3 | SI4500BDY-T1-E3 | SI4500BDY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4500BDY-T1-E3 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; N and P-Channel, Common Drain | |
| V(BR)DSS | 20 volts | 20 volts | |
| PD | 1300 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) |
