N-CH MOSFET 150V 3.5A 50mR SO Surface Mount Product overview: SI4488DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 150V, 3.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 150V, 3.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4488DY-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 150V 3.5A 8SO
Manufacturer: Vishay
Win Source Part Number: 142284-SI4488DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 3.5A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 36nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
N-Channel 150V 3.5A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
N-Channel 150V 3.5A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
N-Channel 150V 3.5A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:3.1W RoHS Compliant: Yes
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:3.1W RoHS Compliant: Yes
MOSFET N-CH 150V 3.5A 8SO
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI4488DY-T1-GE3 | SI4488DY-T1-GE3 | 142284-SI4488DY-T1-GE3 | SI4488DY-T1-GE3TR-ND | 15R5041 | 26R1883 | SI4488DY-T1-GE3 | SI4488DY-T1-GE3 |
| Product Name | SMD 150V 3.5A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4488DY-T1-GE3 | Single FETs, MOSFETs | N Ch Mosfet; Channel Type Vishay | N Channel Mosfet; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| PD | 1560 milliwatts | 1560 milliwatts | 1560 milliwatts | 3100 milliwatts | 3100 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |