Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY SI4480EY

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092857-SI4480EY Termination: SMD/SMT Length: 5 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 80 V Power Dissipation: 3 W Height: 1.55 mm Weight: 84.99187 mg Resistance: 35 mΩ Number of Channels: 1 Number of Pins: 8 Width: 4 mm Rise Time: 12.5 ns Fall Time: 22 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Alternative Parts (Cross-Reference): SI4480EYSI4480EY/; Popularity: Low Fake Threat In the Open Market: 74 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 3 W Turn-On Delay Time: 12.5 ns Continuous Drain Current (ID): 6.2 A Drain to Source Breakdown Voltage: 80 V Turn-Off Delay Time: 52 ns Drain to Source Resistance: 35 mΩ Gate to Source Voltage (Vgs): 20 V Dual Supply Voltage: 80 V Nominal Vgs: 2 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092857-SI4480EY Termination: SMD/SMT Length: 5 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 80 V Power Dissipation: 3 W Height: 1.55 mm Weight: 84.99187 mg Resistance: 35 mΩ Number of Channels: 1 Number of Pins: 8 Width: 4 mm Rise Time: 12.5 ns Fall Time: 22 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Alternative Parts (Cross-Reference): SI4480EYSI4480EY/; Popularity: Low Fake Threat In the Open Market: 74 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 3 W Turn-On Delay Time: 12.5 ns Continuous Drain Current (ID): 6.2 A Drain to Source Breakdown Voltage: 80 V Turn-Off Delay Time: 52 ns Drain to Source Resistance: 35 mΩ Gate to Source Voltage (Vgs): 20 V Dual Supply Voltage: 80 V Nominal Vgs: 2 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY - 1092857-SI4480EY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY
1092857-SI4480EY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY 1092857-SI4480EY
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092857-SI4480EY Termination: SMD/SMT Length: 5 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 80 V Power Dissipation: 3 W Height: 1.55 mm Weight: 84.99187 mg Resistance: 35 mΩ Number of Channels: 1 Number of Pins: 8 Width: 4 mm Rise Time: 12.5 ns Fall Time: 22 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Alternative Parts (Cross-Reference): SI4480EYSI4480EY/; Popularity: Low Fake Threat In the Open Market: 74 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 3 W Turn-On Delay Time: 12.5 ns Continuous Drain Current (ID): 6.2 A Drain to Source Breakdown Voltage: 80 V Turn-Off Delay Time: 52 ns Drain to Source Resistance: 35 mΩ Gate to Source Voltage (Vgs): 20 V Dual Supply Voltage: 80 V Nominal Vgs: 2 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1092857-SI4480EY
Termination: SMD/SMT
Length: 5 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 80 V
Power Dissipation: 3 W
Height: 1.55 mm
Weight: 84.99187 mg
Resistance: 35 mΩ
Number of Channels: 1
Number of Pins: 8
Width: 4 mm
Rise Time: 12.5 ns
Fall Time: 22 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SO
Alternative Parts (Cross-Reference): SI4480EYSI4480EY/;
Popularity: Low
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 3 W
Turn-On Delay Time: 12.5 ns
Continuous Drain Current (ID): 6.2 A
Drain to Source Breakdown Voltage: 80 V
Turn-Off Delay Time: 52 ns
Drain to Source Resistance: 35 mΩ
Gate to Source Voltage (Vgs): 20 V
Dual Supply Voltage: 80 V
Nominal Vgs: 2 V

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1092857-SI4480EY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4480EY
Package Type SOT3; SO
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